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GaN Characterization Intern

Power Integrations
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Internship Title: GaN Characterization Intern

Location: San Jose

 

Role Description:

Internship Summary, Responsibilities, and Deliverables:

Intern would be responsible for executing experiments including

  • static/dynamic characterization of discrete or cascode GaN devices
  • TDDB-based lifetime study and
  • data analysis and interpretation  

Deliverable would be a concise report including key comparison charts and tables that the team can use as part of customer communications. 

Qualifications & Requirements

Required Skills:

Preferred Skills: Hands on experience with static and dynamic characterization of semiconductor power device

Education Level: MS/PhD student

Field(s) of Study: Semiconductor device physics, GaN, Reliability, WBG applications

Power Integrations is committed to building teams that drive innovation and therefore review a range of factors when determining compensation.  The hourly pay range for this internship is $40 to $45. Our pay ranges are determined by role, level, qualifications and work location.  

 

The range displayed on the job posting reflects the minimum and maximum target for this intern in California. Within the range, individual pay is determined by additional factors, including job-related skills, experience, and relevant education or training.